PART |
Description |
Maker |
OM6050SJ OM6051SJ OM6052SJ OM6053SJ OM6054SJ OM605 |
High Current, High Voltage 1000V , 10 Amp N-Channel, MOSFET, High Energy Capability(大电流,高电压,1000V , 10A,N沟道,MOS场效应管(高能容量)) 高电流,高电000V0安培N沟道,MOSFET的高能能力(大电流,高电压,1000V0A条,沟道来说,MOS场效应管(高能容量) HIGH CURRENT MOSFET IN ISOLATED, TO-267 HERMETIC PACKAGE, SIZE 7 DIE, LOW RDS(on) 500V Single N-Channel Hi-Rel MOSFET in a TO-267AA package 100V Single N-Channel Hi-Rel MOSFET in a TO-267AA package 600V Single N-Channel Hi-Rel MOSFET in a TO-267AA package 200V Single N-Channel Hi-Rel MOSFET in a TO-267AA package
|
International Rectifier
|
INK0001AX08 INK0001AC1 INK0001AM1 INK0001AU1 INK00 |
High speed switching Silicon N-channel MOSFET
|
Isahaya Electronics Corporation
|
CMLDM7002A |
SURFACE MOUNT PICOmini DUAL N-CHANNEL ENHANCEMENT-MODE SILICON MOSFET 280 mA, 60 V, 2 CHANNEL, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
|
Central Semiconductor, Corp.
|
RJM0306JSP-00-J0 RJM0306JSP10 |
Silicon N / P Channel Power MOS FET High Speed Power Switching 3.5 A, 30 V, 4 CHANNEL, N AND P-CHANNEL, Si, POWER, MOSFET 4.90 X 3.95 MM, SOP-8
|
Renesas Electronics Corporation
|
NTE2935 NTE2933 |
30V N-Channel PowerTrench MOSFET 30V的N沟道的PowerTrench MOSFET MOSFET N-Channel, Enhancement Mode High Speed Switch
|
NTE[NTE Electronics]
|
RJL5020DPK RJL5020DPK-00-T0 |
Silicon N Channel MOSFET High Speed Power Switching
|
Renesas Electronics Corporation
|
H7N1004LD-15 |
Silicon N-Channel MOSFET High-Speed Power Switching
|
Renesas Electronics Corporation
|
HS56021 HS56021TZ-E |
Silicon N Channel MOSFET High Speed Power Switching
|
Renesas Electronics Corporation
|
CPH6315 |
P-Channel Silicon MOSFET High-Speed Switching Applications
|
Sanyo Semicon Device
|
RJK6020DPK-00-T0 RJK6020DPK |
Silicon N Channel MOSFET High Speed Power Switching
|
Renesas Electronics Corporation
|